#Hui Zhu

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Fatigue behavior of resistive switching in a BiFeO3 thin film

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A current transient method for trap analysis in BiFeO3 thin films

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Thermal Fatigue Characteristics of Die Attach Materials for Packaged High-Brightness LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A Novel Method for Measuring the Temperature in the Active Region of Semiconductor Modules

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

#Hui Zhu

Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

Effect of post-deposition annealing pressure on bipolar resistive switching in RF sputtered BiFeO<inf>3</inf>/Nb:SrTiO<inf>3</inf> heterostructure

Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature

Substrate thinning and external stress effect on the output characteristics of AlGaN/GaN HEMTs

Fatigue behavior of resistive switching in a BiFeO3 thin film

A current transient method for trap analysis in BiFeO3 thin films

Effect of substrate thinning on the electronic transport characteristics of AlGaN/GaN HEMTs

Junction Temperature Measurement Method for Power mosfets Using Turn-On Delay of Impulse Signal

Study of Heat Transport Behavior in GaN-Based Transistors by Schottky Characteristics Method

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared Thermography

Self-heating and traps effects on the drain transient response of AlGaN/GaN HEMTs

Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode Bars

Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs laser diodes

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs

The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions

The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes

Thermal Fatigue Characteristics of Die Attach Materials for Packaged High-Brightness LEDs

A Novel Method for Measuring the Temperature in the Active Region of Semiconductor Modules

Determination of Thermal Fatigue Delamination of Die Attach Materials for High-Brightness LEDs

Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions

The thermal properties of AlGaAs/GaAs laser diode bars analyzed by the transient thermal technique

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Wake-up effect in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> ferroelectric thin-film capacitors under a cycling electric field

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method