Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "14598" } Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

关注

Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

2014

期刊 IEEE Electron Device Letters

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Chunsheng Guo · Bing Deng · Guangchen Zhang

下载全文

卷 35
期 3
页码 345-347
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0741-3106
DOI: 10.1109/led.2014.2300856

LabXing 上可以免费创建课题组网站