array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12337" } Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors - Novel Semiconductor Devices and Reliability Lab | LabXing

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Effect of Uniaxial Tensile Strains at Different Orientations on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors

2020
期刊 IEEE Transactions on Electron Devices
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  • 卷 67
  • 期 2
  • 页码 449-454
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2019.2961956
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