Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "15320" } Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

2023

期刊 IEEE Transactions on Device and Materials Reliability

作者 Xiaozhuang Lu · Shiwei Feng · Shijie Pan · Xuan Li · Kun Bai · Hui Zhu

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页码 1-1
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1530-4388
DOI: 10.1109/tdmr.2023.3253957

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