#Shijie Pan

A voltage-transient method for characterizing traps in GaN HEMTs

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A new method for detecting heteromorphic workpiece brazing layer quality based on thermal probe

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Build-in compact and efficient temperature sensor array on field programmable gate array

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Effects of temperature and bias voltage on electron transport properties in GaN highelectron-mobility transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Nondestructive Measurement for Front Facet Temperature of Semiconductor Lasers

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Study of the temperature distribution in insulated gate bipolar transistor module under different test conditions

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Measurement Deviation of the Virtual Junction Temperature by the Saturation Voltage Drop Method for Insulated-Gate Bipolar Transistors

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Measuring Double-Sided Thermal Resistance of Press-Pack IGBT Modules Based on Ratio of Double-Sided Heat Dissipation

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

Novel Semiconductor Devices and Reliability Lab , 北京工业大学

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