array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12328" } Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method - Novel Semiconductor Devices and Reliability Lab | LabXing

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Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

2021
期刊 IEEE Transactions on Electron Devices
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  • 卷 68
  • 期 8
  • 页码 3968-3973
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2021.3089449
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