Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12326" } Effect of high- and low-side blocking on short-circuit characteristics of SiC MOSFET - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2021

期刊 Microelectronics Reliability

作者 Kun Bai · Shiwei Feng · Xiang Zheng · Xin He · Shijie Pan · Xuan Li

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卷 123
页码 114227
Elsevier BV
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2021.114227

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