The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6261" } The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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The channel temperature dependence of drain transient response in AlGaN/GaN HEMTs

2014

会议 2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Xueqin Gong · Chunsheng Guo

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IEEE
ISBN: 9781479966325
DOI: 10.1109/icrms.2014.7107170

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