The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6271" } The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes

2012

期刊 Journal of Applied Physics

作者 Yanbin Qiao · Shiwei Feng · Cong Xiong · Xiaoyu Ma · Hui Zhu · Chunsheng Guo · Guanghua Wei

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卷 112
期 11
页码 113104
AIP Publishing
ISSN: 0021-8979
DOI: 10.1063/1.4768194

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