Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6254" } Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2013

期刊 Journal of Applied Physics

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Guangchen Zhang · Bing Deng · Lin Ma

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卷 114
期 9
页码 094516
AIP Publishing
ISSN: 0021-8979
DOI: 10.1063/1.4820763

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