Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6259" } Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress

2012

会议 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

作者 Lei Shi · Shi-Wei Feng · Chun-Sheng Guo · Hui Zhu

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IEEE
ISBN: 9781467324755
DOI: 10.1109/icsict.2012.6467706

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