Fatigue behavior of resistive switching in a BiFeO3 thin film - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6227" } Fatigue behavior of resistive switching in a BiFeO3 thin film - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Fatigue behavior of resistive switching in a BiFeO3 thin film

2018

期刊 Japanese Journal of Applied Physics

作者 Hui Zhu · Ying Yang · Anquan Jiang · Zilong Bai · Xiao Meng · Shiwei Feng

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卷 57
期 4
页码 041501
Japan Society of Applied Physics
ISSN: 0021-4922
DOI: 10.7567/jjap.57.041501

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