Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6252" } Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Determining Drain Current Characteristics and Channel Temperature Rise in GaN HEMTs

2014

期刊 IEEE Transactions on Device and Materials Reliability

作者 Yamin Zhang · Shiwei Feng · Hui Zhu · Xueqin Gong · Lei Shi · Chunsheng Guo

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卷 14
期 4
页码 978-982
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 1530-4388
DOI: 10.1109/tdmr.2014.2356233

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