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#Lixing Zhou
Understanding dipole formation at dielectric/dielectric hetero-interface
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Identification of interfacial defects in a Ge gate stack based on ozone passivation
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Electron mobility in silicon nanowires using nonlinear surface roughness scattering model
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences
铁电器件课题组（王晓磊） , 中国科学院微电子研究所
Study of traps in low-temperature polysilicon thin film transistors using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Experimental investigation on dipole and band offset affected by charge neutrality level modulation
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Effects of Static and Repetitive Uniaxial Bending Strains on the Electrical Properties and Trap Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Wake-up effect in Hf<sub>0.4</sub>Zr<sub>0.6</sub>O<sub>2</sub> ferroelectric thin-film capacitors under a cycling electric field
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method
Novel Semiconductor Devices and Reliability Lab , 北京工业大学