array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11871" } Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs - 铁电器件课题组(王晓磊) | LabXing

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

2019
期刊 Semiconductor Science and Technology
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