array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "13144" } Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences - 铁电器件课题组(王晓磊) | LabXing

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

2019
期刊 IEEE Transactions on Electron Devices
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  • 卷 66
  • 期 4
  • 页码 1669-1674
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0018-9383
  • DOI: 10.1109/ted.2019.2900801