Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11888" } Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

2017

期刊 Journal of Physics D: Applied Physics

作者 Lixing Zhou · Xiaolei Wang · Xueli Ma · Jinjuan Xiang · Hong Yang · Chao Zhao · Tianchun Ye · Wenwu Wang

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卷 50
期 24
页码 245102
IOP Publishing
ISSN: 0022-3727
DOI: 10.1088/1361-6463/aa6f96

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