array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3571" } Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process - 微电子所鸿之微集成电路联合计算实验室 | LabXing

Novel GAA Si Nanowire p-MOSFETs With Excellent Short-Channel Effect Immunity via an Advanced Forming Process

2018
期刊 IEEE Electron Device Letters
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  • 卷 39
  • 期 4
  • 页码 464-467
  • Institute of Electrical and Electronics Engineers (IEEE)
  • ISSN: 0741-3106
  • DOI: 10.1109/led.2018.2807389