Performance Enhancement for Charge Trapping Memory by Using Al 2 O 3 /HfO 2 /Al 2 O 3 Tri-Layer High-κ Dielectrics and High Work Function Metal Gate - 微电子所鸿之微集成电路联合计算实验室 | LabXing

array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3570" } Performance Enhancement for Charge Trapping Memory by Using Al 2 O 3 /HfO 2 /Al 2 O 3 Tri-Layer High-κ Dielectrics and High Work Function Metal Gate - 微电子所鸿之微集成电路联合计算实验室 | LabXing

微电子所鸿之微集成电路联合计算实验室

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Performance Enhancement for Charge Trapping Memory by Using Al 2 O 3 /HfO 2 /Al 2 O 3 Tri-Layer High-κ Dielectrics and High Work Function Metal Gate

2018

期刊 ECS Journal of Solid State Science and Technology

作者 Zhaozhao Hou · Zhenhua Wu · Huaxiang Yin

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卷 7
期 6
页码 N91-N95
The Electrochemical Society
ISSN: 2162-8769
DOI: 10.1149/2.0261806jss

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