Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory - 微电子所鸿之微集成电路联合计算实验室 | LabXing

array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3566" } Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory - 微电子所鸿之微集成电路联合计算实验室 | LabXing

微电子所鸿之微集成电路联合计算实验室

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Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory

2018

期刊 ECS Journal of Solid State Science and Technology

作者 Zhaozhao Hou · Jiaxin Yao · Zhenhua Wu · Huaxiang Yin

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卷 7
期 5
页码 Q75-Q79
The Electrochemical Society
ISSN: 2162-8769
DOI: 10.1149/2.0011805jss

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