array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6285" } Determination of channel temperature of AlGaN/GaN HEMT by electrical method - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
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Determination of channel temperature of AlGaN/GaN HEMT by electrical method

2010
会议 2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)
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