Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6241" } Mechanism of the self-changing parameters and characteristics in AlGaN/GaN high-electron mobility transistors after a step voltage stress - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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2015

期刊 Journal of Semiconductors

作者 Lei Shi · Shiwei Feng · Kun Liu · Yamin Zhang

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卷 36
期 7
页码 074005
IOP Publishing
ISSN: 1674-4926
DOI: 10.1088/1674-4926/36/7/074005

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