array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6221" } Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf> - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
关注
分享到

Junction Temperature measurement of SiC BJT via the voltage drop of V<inf>BC</inf>

2018
会议 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
下载全文
LabXing 上可以免费创建课题组网站
© LabXing 2018 关于LabXing 帮助中心 testing.service 京公网安备11010802025734号