A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6218" } A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient

2017

期刊 IEEE Transactions on Electron Devices

作者 Xiang Zheng · Shiwei Feng · Yamin Zhang · Xin He · Yu Wang

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卷 64
期 4
页码 1498-1504
Institute of Electrical and Electronics Engineers (IEEE)
ISSN: 0018-9383
DOI: 10.1109/ted.2017.2654481

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