Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "15264" } Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Analysis of the hybrid trapping effect in GaN HEMTS based on the current transient spectroscopy

2016

会议 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者 Xiang Zheng · Shiwei Feng · Yamin Zhang · Xin He · Yu Wang

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IEEE
DOI: 10.1109/icsict.2016.7998916

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