array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "15085" } Influence of heat source size on thermal resistance of AlGaN/GaN HEMT - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
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Influence of heat source size on thermal resistance of AlGaN/GaN HEMT

2017
会议 2017 IEEE 12th International Conference on ASIC (ASICON)
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