array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "14599" } The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

大学 北京工业大学 / 信息学部
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The investigation of failure mechanism of n-GaN/Ti/Al/Ni/Au ohmic contact by novel TLM

2009
会议 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
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