array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(5) "12336" } The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars

2020
会议 2020 3rd International Conference on Electron Device and Mechanical Engineering (ICEDME)
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