Simulation for the feasibility of high-mobility channel in 3D nand memory - 微电子所鸿之微集成电路联合计算实验室 | LabXing

array(2) { ["lab"]=> string(3) "601" ["publication"]=> string(4) "3565" } Simulation for the feasibility of high-mobility channel in 3D nand memory - 微电子所鸿之微集成电路联合计算实验室 | LabXing

微电子所鸿之微集成电路联合计算实验室

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Simulation for the feasibility of high-mobility channel in 3D nand memory

2018

会议 2018 China Semiconductor Technology International Conference (CSTIC)

作者 Zhaozhao Hon · Jiaxin Yao · Zhenhua Wu · Huaxiang Yin

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IEEE
ISBN: 9781538653081
DOI: 10.1109/cstic.2018.8369198

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