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#Ning Wan
The degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Identifying the failure mechanism in accelerated life tests by two-parameter lognormal distributions
Novel Semiconductor Devices and Reliability Lab , 北京工业大学
Evaluation of VDMOS Storage Failure Rate Based on Accelerated Factor
Novel Semiconductor Devices and Reliability Lab , 北京工业大学