Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics - Novel Semiconductor Devices and Reliability Lab | LabXing

array(2) { ["lab"]=> string(3) "859" ["publication"]=> string(4) "6283" } Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics - Novel Semiconductor Devices and Reliability Lab | LabXing

Novel Semiconductor Devices and Reliability Lab

简介 A semiconductor group in BJUT

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Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

2011

期刊 Chinese Physics Letters

作者 Guang-Chen Zhang · Shi-Wei Feng · Pei-Feng Hu · Yan Zhao · Chun-Sheng Guo · Yang Xu · Tang-Sheng Chen · Yi-Jian Jiang

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卷 28
期 1
页码 017201
IOP Publishing
ISSN: 0256-307X
DOI: 10.1088/0256-307x/28/1/017201

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