Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well - KaiChang Group | LabXing

array(2) { ["lab"]=> string(3) "474" ["publication"]=> string(4) "2559" } Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well - KaiChang Group | LabXing

KaiChang Group

简介 The State Key Laboratory of Superlattices and Microstructures

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Polarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum Well

2012

期刊 Physical Review Letters

作者 M. S. Miao · Q. Yan · C. G. Van De Walle · W. K. Lou · L. L. Li · K. Chang

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卷 109
期 18
American Physical Society (APS)
ISSN: 0031-9007
DOI: 10.1103/physrevlett.109.186803

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