A Watt-level Broadband Power Amplifier in GaAs HBT Process
2019
期刊
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
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- 卷 19
- 期 4
- 页码 357-363
- The Institute of Electronics Engineers of Korea
- ISSN: 1598-1657
- DOI: 10.5573/jsts.2019.19.4.357