Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11887" } Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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Investigation of Thermal Atomic Layer Deposited TaAlC with Low Effective Work-Function on HfO2Dielectric Using TaCl5and TEA as Precursors

2016

期刊 ECS Journal of Solid State Science and Technology

作者 Jinjuan Xiang · Xiaolei Wang · Tingting Li · Jianfeng Gao · Kai Han · Jiahan Yu · Wenwu Wang · Junfeng Li · Chao Zhao

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卷 6
期 1
页码 P38-P41
The Electrochemical Society
ISSN: 2162-8769
DOI: 10.1149/2.0141701jss

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