Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11874" } Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

关注

Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device

2010

期刊 Applied Physics Letters

作者 Xiaolei Wang · Kai Han · Wenwu Wang · Xueli Ma · Dapeng Chen · Jing Zhang · Jun Du · Yuhua Xiong · Anping Huang

下载全文

卷 97
期 6
页码 062901
AIP Publishing
ISSN: 0003-6951
DOI: 10.1063/1.3475774

LabXing 上可以免费创建课题组网站