Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics - 铁电器件课题组（王晓磊） | LabXing

array(2) { ["lab"]=> string(4) "1352" ["publication"]=> string(5) "11869" } Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics - 铁电器件课题组（王晓磊） | LabXing

铁电器件课题组（王晓磊）

简介半导体存储器件

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Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

2016

期刊 Journal of Physics D: Applied Physics

作者 Xiaolei Wang · Jinjuan Xiang · Shengkai Wang · Wenwu Wang · Chao Zhao · Tianchun Ye · Yuhua Xiong · Jing Zhang

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卷 49
期 25
页码 255104
IOP Publishing
ISSN: 0022-3727
DOI: 10.1088/0022-3727/49/25/255104

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