Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device - 单粒子效应研究组 | LabXing

array(2) { ["lab"]=> string(4) "1176" ["publication"]=> string(4) "9769" } Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device - 单粒子效应研究组 | LabXing

单粒子效应研究组

简介

关注

Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

2020

期刊 Chinese Physics B

作者 Bing Ye · Li-Hua Mo · Tao Liu · Jie Luo · Dong-Qing Li · Pei-Xiong Zhao · Chang Cai · Ze He · You-Mei Sun · Ming-Dong Hou · Jie Liu

下载全文

卷 29
期 2
页码 026101
IOP Publishing
ISSN: 1674-1056
DOI: 10.1088/1674-1056/ab5fc4

LabXing 上可以免费创建课题组网站